| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, providing proper film thickness reproducibility and capable of forming an oxide film, wherein taking-in of H and OH is suppressed. SOLUTION: A method for forming an oxide film on a semiconductor wafer by heating the semiconductor wafer in an oxidative atmosphere filling a treating chamber 1 is provided, according to which H is fed into a reactor 26 that is capable of chemically activating H by catalyltic action, the reactor 26 is heated to a temperature below the firing point of H to produce H radicals, and the H radicals are mode to react with oxygen fed into a processing chamber 1 to produce H, while forming the oxide film on a semiconductor wafer. COPYRIGHT: (C)2005,JPO&NCIPI
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