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发明名称
铜层之二步骤原子层淀积法
摘要
本发明提出一种在低温下形成铜薄膜之方法。该方法包括两步骤:从不含氟的铜先质在基板上形成铜氧化物层及将该铜氧化物层还原而在该基板上形成铜板。铜氧化物的形成系经由使用不含氟的铜先质和含氧气体在低温下经由原子层淀积而进行的。烷醇铜、β–二酮化铜和二烷基胺化铜都是较佳的铜先质。所形成的铜氧化物层之还原是使用含氢的气体在低温下进行的。
申请公布号
TW200500495
申请公布日期
2005.01.01
申请号
TW092128738
申请日期
2003.10.16
申请人
亚菲萨科技公司
发明人
千崎佳秀
分类号
C23C18/38
主分类号
C23C18/38
代理机构
代理人
林志刚
主权项
地址
美国
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