METHOD OF FORMING CONTINUOUSLY COMPOSITE DIELECTRIC FILMS USING ALD WITH REACTION MATERIAL AND METHOD OF MANUFACTURING CAPACITOR USING THE SAME

摘要

PURPOSE: A method of forming composite dielectric films and a method of manufacturing a capacitor using the same are provided to form sequentially thin films with different decomposition temperature in one chamber by performing an ALD(Atomic Layer Deposition) using a reaction material with a large temperature window. CONSTITUTION: A substrate is loaded in a reaction chamber(S10). A first metal(S20) is adsorbed on the substrate by providing a first metal compound to the reaction chamber(S20). A first dielectric film is formed by oxidizing the adsorbed first metal by providing oxidizing gas to the reaction chamber(S30). A second metal is adsorbed on the first dielectric film by providing a second metal compound to the reaction chamber(S40). The second metal compound is a metal alkoxide compound with electron withdrawing group substituted for at least one hydrogen. A second dielectric film is formed by oxidizing the adsorbed second metal by providing oxidizing gas to the reaction chamber(S50).