发明名称 POINT STRUCTURES, DEVICES BUILT AROUND THEM, AND THEIR MANUFACTURING METHODS
摘要 FIELD: field-effect emissive electronics. ^ SUBSTANCE: novel design alternates are proposed for electronic devices, such as scanning probes and field-effect transistors, built around point structures. Points are made of whiskers grown from gas phase using steam-liquid-crystal mechanism. New mechanical designs are proposed for manufacturing field-effect emitters and probes for magnetic, electrostatic, morphologic, and other investigations using specific technology. New mechanical designs are also proposed for manufacturing multilever probes. ^ EFFECT: enhanced effectiveness of emission due to enlarged number of emitters having same spatial value. ^ 74 cl, 23 dwg, 8 ex
申请公布号 RU2240623(C2) 申请公布日期 2004.11.20
申请号 RU20010135713 申请日期 2000.05.31
申请人 发明人 GIVARGIZOV E.I.;GIVARGIZOV M.E.
分类号 H01J1/30;G01B21/00;H01J9/00;H01L21/20 主分类号 H01J1/30
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