发明名称 |
HALF-BRIDGE HIGH VOLTAGE GATE DRIVER HAVING PROTECTION OF TRANSISTOR |
摘要 |
<P>PROBLEM TO BE SOLVED: To dynamically protect an output stage and at the same time to quickly perform turn-on by high current output. <P>SOLUTION: A gate drive integrated circuit for switching a power transistor using an external controller includes gate drive capability and a low zero input current, and enables the use of bootstrap supplitechnic technique to supply a logic supply voltage. The gate drive integrated circuit detects power transistor non-saturation and protects a non-saturated transistor from a transitional excessive voltage by gently turning off a non-saturated transistor via a soft shut-down sequence. The fault control circuit of the gate drive integrated circuit manages the shortage of a supply voltage and the protection of the non-saturation of a transistor and can communicate with a plurality of gate drive integrated circuits in a polyphase system using an exclusive local network. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
申请公布号 |
JP2004201486(A) |
申请公布日期 |
2004.07.15 |
申请号 |
JP20030373517 |
申请日期 |
2003.10.31 |
申请人 |
INTERNATL RECTIFIER CORP |
发明人 |
GALLI GIOVANNI;GIANDALIA MARCO;MERELLO ANDREA |
分类号 |
H01L27/04;H01L21/822;H02M1/00;H02M1/08;H02M1/32;H02M3/337;H03K17/08;H03K17/56 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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