| 摘要 |
PURPOSE: A method for forming a contact plug of a semiconductor device is provided to reduce contact resistance, and to prevent volcano phenomenon by using a single barrier metal of a titanium nitride layer without a titanium film. CONSTITUTION: An interlayer dielectric(42) is formed on a semiconductor substrate(31) with a conductive layer. A contact hole for metal lines is formed to expose the conductive layer by selectively etching the interlayer dielectric. A titanium-rich titanium nitride layer is formed on the resultant structure including the contact hole. The titanium-rich TiN layer is changed to a titanium nitride layer(44a) as a barrier metal by annealing. Then, a tungsten plug(46a) is filled in the contact hole.
|
