| 发明名称 |
PROCESSING METHOD FOR SEMICONDUCTOR WAFER |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a processing method for semiconductor wafers whereby a semiconductor wafer (2) can be treated as required without damaging it even when its rear surface is ground remarkably thin. <P>SOLUTION: Prior to the grinding of the rear surface of a semiconductor wafer, the front surface of the semiconductor wafer is so opposed to the one-sided surface of a protective substrate (10) in at least whose central region (12) a large number of fine holes (16) are formed as to mount the semiconductor wafer on the protective substrate. <P>COPYRIGHT: (C)2004,JPO</p> |
| 申请公布号 |
JP2004153193(A) |
申请公布日期 |
2004.05.27 |
| 申请号 |
JP20020319279 |
申请日期 |
2002.11.01 |
| 申请人 |
DISCO ABRASIVE SYST LTD |
发明人 |
YAJIMA KOICHI;KITAMURA MASAHIKO;NAMIOKA SHINICHI;NANJO MASATOSHI |
| 分类号 |
H01L21/683;H01L21/00;H01L21/301;H01L21/304;H01L21/58;H01L21/68;H01L21/78;(IPC1-7):H01L21/304 |
主分类号 |
H01L21/683 |
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