发明名称 |
EDMOS DEVICE HAVING A LATTICE TYPE DRIFT REGION |
摘要 |
The present invention provides an EDMOS (extended drain MOS) device having a lattice type drift region and a method of manufacturing the same. In the case of n channel EDMOS(nEDMOS), the drift region has a lattice structure in which an n lattice having a high concentration and a p lattice having a low concentration are alternately arranged. As a drain voltage is applied, a depletion layer is abruptly extended by a pn junction of the n lattice and the p lattice, so that the entire drift region is easily depleted. Therefore, a breakdown voltage of the device is increased, and an on resistance of the device is decreased due to the n lattice with high concentration.
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申请公布号 |
US2003132459(A1) |
申请公布日期 |
2003.07.17 |
申请号 |
US20020179492 |
申请日期 |
2002.06.24 |
申请人 |
LEE DAE WOO;ROH TAE MOON;PARK IL YONG;YANG YIL SUK;KIM JONG DAE |
发明人 |
LEE DAE WOO;ROH TAE MOON;PARK IL YONG;YANG YIL SUK;KIM JONG DAE |
分类号 |
H01L29/06;H01L29/78;(IPC1-7):H01L29/76 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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