Method of manufacturing a semiconductor device wiring layer having an oxide layer between the polysilicon and silicide layers

摘要

In forming a conduction film in a semiconductor device, after an uneven natural oxide film on a silicon film has been once removed, an even and clean silicon oxide film is formed by an oxidizing chemical solution treatment. After that, a silicide film is formed, thus forming a stable conduction film consisting of a two-layered structure of a polysilicon/silicide film.