发明名称 |
Cell array region of a NOR-type mask ROM device and fabricating method therefor |
摘要 |
In a cell array region of a NOR-type mask ROM device and a fabricating method therefor, following formation of a plurality of word lines parallel to one another on a semiconductor substrate, a plurality of sub-bit lines intersecting the top portion of the plurality of word lines at right angles are formed. Trench regions are formed on the semiconductor substrate exposed by the plurality of word lines and the plurality of sub-bit lines. An interlayer insulating layer is formed on the entire surface of the resulting material, and a plurality of bit lines which are parallel to one another are formed on the interlayer insulating layer.
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申请公布号 |
US6573574(B2) |
申请公布日期 |
2003.06.03 |
申请号 |
US20020178626 |
申请日期 |
2002.06.24 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE WOON-KYUNG |
分类号 |
H01L21/027;G11C17/12;H01L21/8246;H01L27/112;(IPC1-7):H01L29/76;H01L29/54;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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