发明名称 |
Methods of forming integrated circuit capacitors having electrodes therein that comprise conductive plugs |
摘要 |
Disclosed is a capacitor of semiconductor integrated circuit and a method for fabricating the same by which characteristic of a capacitor and bit resolution can be improved to thereby obtain an improved analog device of high accuracy. The capacitor of semiconductor integrated circuit includes a conductive lower electrode formed on a predetermined portion of an insulating substrate, an insulating layer formed on the insulating substrate including the conductive lower electrode and provided with a via hole so that the surface of the lower electrode is exposed in its predetermined portion, a dielectric layer formed on the insulating layer and in the via hole, and an conductive upper electrode formed on the predetermined portion of the dielectric layer including the via hole to have a piled structure such as "conductive plug/conductive layer pattern".
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申请公布号 |
US6569746(B2) |
申请公布日期 |
2003.05.27 |
申请号 |
US20000733716 |
申请日期 |
2000.12.08 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE HYAE-RYOUNG;YU SUN-IL;KIM DONG-WOO |
分类号 |
H01L21/02;H01L21/768;H01L23/522;H01L27/08;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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