| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a high withstand voltage semiconductor device in which a gate electrode, a low concentration impurity layer and a high concentration impurity layer do not deviate at positions, in the method for manufacturing the semiconductor device for forming the low concentration impurity layer and the high concentration impurity layer. SOLUTION: The method for manufacturing the high withstand voltage semiconductor device comprises a step of forming a temporary gate 3a, a step of forming the low concentration impurity layer 4 by self-alignment with the gate 3a used as a mask, a step of forming a primary gate 6 after the gate 3a is removed, and a step of forming the high concentration impurity layer 8 by self-alignment with the gate 6 used as a mask.
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