发明名称 |
Semiconductor device for isolating a photodiode to reduce junction leakage and method of formation |
摘要 |
An improved semiconductor device that reduces reverse bias junction leakage in a photodiode by using a junction isolation region to isolate the photodiode from a trench isolation region. The improved semiconductor device improves image quality for different applications such as stand-alone digital cameras and digital cameras embedded in other imaging devices such as cellular phones and personal digital assistants.
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申请公布号 |
US2003038336(A1) |
申请公布日期 |
2003.02.27 |
申请号 |
US20010935231 |
申请日期 |
2001.08.22 |
申请人 |
MANN RICHARD A. |
发明人 |
MANN RICHARD A. |
分类号 |
H01L21/00;H01L21/265;H01L21/425;H01L21/76;H01L27/01;H01L31/06;(IPC1-7):H01L27/01 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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