| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that is high in withstand voltage and to provide a method of manufacturing the device. SOLUTION: In the surface area of an N-type drain drift region 20, an N<+> - type drain region 17 and a P-type well region 18 surrounding an N<+> -type source region are formed. Near the well region 18, in addition, a polysilicon film 25 is provided as a gate electrode. Between the drain region 17 and well region 18, a first trench 21 filled up with a silicon oxide film 28 is arranged. In the trench 21, a plurality of second field plates 27 is arranged with the silicon oxide film 28 in between.
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