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发明名称
Verfahren zur Beeinflussung des Oberflächenprofils von aus der Gasphase abgeschiedenen Halbleiterschichten
摘要
申请公布号
AT253570(B)
申请公布日期
1967.04.10
申请号
AT19650007659
申请日期
1965.08.19
申请人
SIEMENS & HALSKE AKTIENGESELLSCHAFT
发明人
分类号
H01L
主分类号
H01L
代理机构
代理人
主权项
地址
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