METHOD FOR FORMING CONTACT HOLE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a contact hole of semiconductor devices is provided to simplify manufacturing processes by omitting a cleaning process to remove an oxide layer formed in the contact hole. CONSTITUTION: A first conductive layer for bit line is formed on a substrate(200). A second conductive layer made of TiN having a different etching selectivity compared to the first conductive layer is deposited by a PVD(Physical Vapor Deposition). After forming a TEOS pattern on the second conductive layer, a second conductive pattern is formed by using the TEOS pattern as a mask. A bit line(202a) is formed by selectively etching the first conductive layer using the second conductive pattern as a mask. After forming an interlayer dielectric(210) on the resultant structure, a contact hole is formed to expose the second conductive pattern by selectively etching the interlayer dielectric(210).