SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A semiconductor memory device and a method for fabricating the same are provided to separate neighboring SACs(Self Aligned Contact pads) and prevent generation of void of an inside of an interlayer dielectric between word line structures. CONSTITUTION: An active region(51) is defined on a semiconductor substrate. A gate insulating layer, a conductive layer, and a capping layer are deposited on the semiconductor substrate. The capping layer and the conductive layer are patterned. A spacer is formed on sidewalls of the patterned capping layer and the patterned conductive layer. A plurality of word line structures(60) are formed with the gate insulating layer, the conductive layer, the capping layer, and the spacer. A source and a drain region are formed on the active region(51) of both sides of the word line structure(60). A photoresist pattern is formed thereon. An oxide layer is formed on a surface of the above structure. The photoresist pattern is removed by a plasma ashing method. A plurality of SAC(68a,68b) are formed at a space between the word line structures(60). The oxide layer is removed. An interlayer dielectric is formed thereon. A bit line contact hole(72) is formed by etching the interlayer dielectric. A bit line(74) is formed by depositing and patterning a conductive layer on the interlayer dielectric.