| 摘要 |
PROBLEM TO BE SOLVED: To provide an SRAM cell manufacturing method capable of improving the operation speed of an element by preventing the excessive oxidization of a polysilicon gate. SOLUTION: The method comprises a step for providing a semiconductor substrate 21, a step for forming a doped polysilicon layer, a step for forming a non-doped polysilicon layer 25, a step for forming a gate, a step for forming an oxidation preventing film on the surface of the whole structure, a step for forming a sacrifice spacer 29 on the side surface of the oxidation preventing film, a step for removing the exposed part of the oxidation preventing film and the sacrifice space, a step for oxidize-treating the whole structure, a step for forming a low concentration impurity area 31 and a high concentration impurity area 32, a step for forming an interlayer insulation film 35, a step for exposing the upper surface of the gate and the high concentration impurity area, a step for forming a conductive matter layer on the upper surface of the whole structure, and a step for forming a conductive matter layer on the upper surface of the whole structure and connecting the gate and the high concentration impurity area. |
