| 摘要 |
PROBLEM TO BE SOLVED: To provide a new compound that is a lanthanoid compound suitable for producing lanthanoid-including thin film through CVD and is liquid at the vaporization temperature of >=100 deg.C and has a vapor pressure of >=1 Torr at <=200 deg.C, further provide a method of producing the thin film and a method of producing thin film through the CVD process. SOLUTION: Praseodymium trichloride, PrCl3 and (ethylcyclopentadienyl) potassium, K(EtCp) are allowed to react with each other in THF solvent at -78 deg.C - room temperature for one day and night, then the solvent, unreacting reactants and salts are removed and the residue is distilled to obtain a fraction of Pr(EtCp)3 boiling at 180 deg.C/0.64 Torr in 75% yield. The product melts at about 70 deg.C. The vapor of Pr(EtCp)3 formed by gas bubbling from Pr(EtCp)3 heated at 140 deg.C is mixed with H2 O vapor in the CVD chamber to deposit the film layer of Pr(OH)3 on the Si substrate at 350 deg.C under 2 Torr vacuum and annealed the Pr(OH)3 layer at 700 deg.C to form Pr2 O3 film layer.
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