发明名称 |
Verfahren zum teilweisen Sägen von intergrierter Schaltkreise |
摘要 |
<p>A process for partially sawing the streets or grooves (50) on semiconductor wafers (48). After sawing, the streets (50) can be covered by a protective material (52), and then the wafer continues its processing as before. After the wafer (48) is broken, the protective material (52) may or may not be removed. Additionally, the wafer(50) may be broken into individual chips using a wedge piece (70) that has a number of individual wedges (72) on it, where the individual wedges (70) press against the partially sawn streets (50), causing the wafer (48) to break. <IMAGE></p> |
申请公布号 |
DE69430457(T2) |
申请公布日期 |
2002.10.31 |
申请号 |
DE1994630457T |
申请日期 |
1994.01.07 |
申请人 |
TEXAS INSTRUMENTS INC., DALLAS |
发明人 |
MIGNARDI,MICHAEL A.;ALFARO,RAFAEL C. |
分类号 |
B28D5/00;B81C1/00;B81C99/00;H01L21/301;H01L21/304;H01L21/78;(IPC1-7):H01L21/78 |
主分类号 |
B28D5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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