| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor laser having a low working current in which the crystallinity of a regrowth layer is improved and an oscillation threshold current is increased while suppressing the lowering of efficiency, and its manufacturing method. SOLUTION: A first clad layer 3, an active layer 4, a second clad layer 5, and an etching stop layer 6 are formed sequentially on a crystal substrate 1, a third ridge stripe clad layer 7 is formed on the etching stop layer, and block layers 10 are formed on both sides of the third clad layer. The etching stop layer underlying the third cad layer has a thickness T1<=100 nm and the etching stop layer underlying the block layer has a thickness T2 satisfying following relations; T1-T2>1 nm and T2>1 nm.
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