发明名称 |
Multilayer structure and sensor and fabrication process |
摘要 |
<p>A novel multilayer magnetic structure comprises a stack of alternate layers which are (a) first layers (6, 16) based on magnetic material; (b) second layers (12) of Ag or Ag-rich alloy; and (c) thin interfacial layers (8, 14) of Co or Co-rich alloy located at the interfaces of the first and second layers. Preferably, the magnetic material has the formula (I) Ni100-x-y-zCoxFeyAz (I) (where x is 0-100, y is 0-100, z is 0-40 and x+y+z is 0-100), e.g. a 'Permalloy' (RTM). Also claimed are (i) a process for forming the above structure; (ii) a magnetoresistive effect multilayer transducer comprising the above structure; (iii) a current sensor for measuring current passing through an electrical conductor, the sensor having a magnetoresistive strip of the above structure surrounding the conductor with the strip ends being connected to a current measuring device; and (iv) a magnetic read and/or write head having a magnetoresistive element of the above structure.</p> |
申请公布号 |
EP0779632(B1) |
申请公布日期 |
2002.09.11 |
申请号 |
EP19960402718 |
申请日期 |
1996.12.12 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE |
发明人 |
DIENY, BERNARD;AUFFRET, STEPHANE;COWACHE, CHRISTOPHE;BERTHET, FRANCK |
分类号 |
G01R15/20;G01R33/09;G11B5/39;H01F10/08;H01F10/32;H01L43/10;(IPC1-7):H01F10/08 |
主分类号 |
G01R15/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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