发明名称 Multilayer structure and sensor and fabrication process
摘要 <p>A novel multilayer magnetic structure comprises a stack of alternate layers which are (a) first layers (6, 16) based on magnetic material; (b) second layers (12) of Ag or Ag-rich alloy; and (c) thin interfacial layers (8, 14) of Co or Co-rich alloy located at the interfaces of the first and second layers. Preferably, the magnetic material has the formula (I) Ni100-x-y-zCoxFeyAz (I) (where x is 0-100, y is 0-100, z is 0-40 and x+y+z is 0-100), e.g. a 'Permalloy' (RTM). Also claimed are (i) a process for forming the above structure; (ii) a magnetoresistive effect multilayer transducer comprising the above structure; (iii) a current sensor for measuring current passing through an electrical conductor, the sensor having a magnetoresistive strip of the above structure surrounding the conductor with the strip ends being connected to a current measuring device; and (iv) a magnetic read and/or write head having a magnetoresistive element of the above structure.</p>
申请公布号 EP0779632(B1) 申请公布日期 2002.09.11
申请号 EP19960402718 申请日期 1996.12.12
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE 发明人 DIENY, BERNARD;AUFFRET, STEPHANE;COWACHE, CHRISTOPHE;BERTHET, FRANCK
分类号 G01R15/20;G01R33/09;G11B5/39;H01F10/08;H01F10/32;H01L43/10;(IPC1-7):H01F10/08 主分类号 G01R15/20
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