| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory, together with its manufacturing method, which has a memory cell structure wherein a storage electrode film is surely removed, to decrease the fraction defective of memory. SOLUTION: The method for manufacturing a semiconductor memory is for one comprising a memory cell structure, where a storage node in which a storage electrode film formed inside a hole of an interlayer insulating film deposited on a substrate is roughened, constitutes a capacitor in corporation with a cell plate via a dielectric film. A hole is formed in the thickness direction of the interlayer insulating film, and a storage electrode film is formed inside the hole and on the upper surface side of the interlayer insulating film. Such a storage electrode film being exposed on the upper surface side of the interlayer insulating film is removed, and the storage electrode film formed inside the hole is roughened, to form the cell plate in the hole as well as on the upper side of the interlayer insulating film, and here the storage electrode film exposed from the upper surface side of the interlayer insulating film is removed, before the storage electrode film formed inside the hole is roughened. |
