| 摘要 |
<p>A method for the formation of a thin optical crystal layer (e.g., a thin LiNbO3 optical single crystal layer) overlying a low dielectric constant substrate (e.g., a low dielectric constant glass substrate). The method includes implanting ions (e.g., He+) through a surface of an optical crystal substrate. The implanting of the ions defines, a thin ion-implanted optical crystal layer overlying the optical crystal substrate. A low dielectric constant substrate is subsequently bonded to the surface, using either a direct or an indirect bonding technique, to form a bonded structure. The bonded structure is thermally annealed at a temperature in the range of 300 °C to 600 °C for 30 minutes to 300 minutes. Thereafter, the thin ion-implanted optical crystal layer and low dielectric constant substrate are separated from the bulk optical crystal substrate using mechanical force applied to the low dielectric constant substrate and/or the bulk optical crystal substrate in the direction of separation.</p> |
