| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a mask for lithography with high accuracy which can prevent displacement in a highly integrated circuit for a semiconductor device. SOLUTION: This mask for X-ray lithography comprises an Si frame, an artificial diamond film as a membrane laminated in the order on the upper surface thereof, an antireflection film, an X-ray absorption body, and an etching mask. It this case, a platinum group metal film having a highly oriented crystal face structure, in which the maximum peak (h) of a specified crystal face in an X-ray diffraction pattern satisfies the equation w/h=0.8 or smaller (where (w) is the peak width (half value breadth) at half the total height of the maximum peak), when the antireflection film is measured from its upper surface by using an X-ray diffraction equipment, is interposed between the antireflection film and X-ray absorption body.</p> |
