| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma film deposition system by which the dissipitation of radicals in the process of being introduced into a film deposition chamber is prevented, and the radicals of cleaning gas generated at the outside of the film deposition chamber can be utilized for cleaning in the film deposition chamber with high efficiency and to provide a cleaning method therefor. SOLUTION: A cleaning gas introducing means 23 is directly communicated with the inside of a film deposition chamber 10, and, at the time of cleaning for the inside of the film deposition chamber 10, radicals generated by a radical generating means 21 are directly introduced into the film deposition chamber 10 without being passed through a shower plate 5.
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