MANUFACTURING METHOD OF DIELECTRIC ISOLATION BONDING

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a dielectric isolation bonding wafer where a wafer for an active layer is hard to be damaged at working when a polysilicon sticking to the rear surface of the wafer is removed. SOLUTION: After a high-temperature polysilicon layer 16 is grown, the rear surface of a silicon wafer 10 is etched so that a polysilicon protrusion 16a infiltrating to the rear surface of the silicon wafer is removed. Removing by etching causes less damage to the silicon wafer 10 than by conventional polishing method. No flatness of the surface around the polysilicon projection 16a is damaged when the strongly fitting polysilicon protrusion 16a is removed.