| 摘要 |
PROBLEM TO BE SOLVED: To detect a memory cell small in margin by being read out with less area penalty in a ferroelectric memory device. SOLUTION: In a 1T1C type ferroelectric memory, a reference level is adjusted by a potential generating circuit 1 at the testing time, so that the read-out margin of a memory cell is reduced intentionally. Also, a reference level is fixed and a pulse potential given to a plate line PL is adjusted by a potential generating circuit 2 at the testing time, and the quantity of read-out electric charges from a memory cell is reduced, so that the read-out margin of a memory cell is reduced intentionally. In a 2T2C type ferroelectric memory, a pulse potential given to a plate line from the potential generating circuit is adjusted, and the quantity of read-out electric charges from a memory cell is reduced, so that the read-out margin of a memory cell is reduced intentionally.
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