发明名称 |
Thin film forming method, thin film forming apparatus and solar cell |
摘要 |
<p>The present invention is to provide a thin film forming method and apparatus which make it possible to form a thin film having an excellent thickness uniformity over a large-sized substrate. <??>According to the invention, there is provided a thin film forming method and apparatus comprising: a film forming chamber in which an inductive coupling electrode having a feeding portion and a grounding portion at its two ends is arranged; a high-frequency power source for feeding a high-frequency power to the feeding portion; and a waveform generator for amplitude-modulating the high-frequency power outputted from the high-frequency power source, whereby the amplitude-modulated high-frequency power is fed to the inductive coupling electrode to generate a plasma so that a thin film may be formed on a substrate arranged to face the inductive coupling electrode. <IMAGE></p> |
申请公布号 |
EP1146569(A2) |
申请公布日期 |
2001.10.17 |
申请号 |
EP20010108979 |
申请日期 |
2001.04.11 |
申请人 |
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY;ISHIKAWAJIMA-HARIMA HEAVY INDUSTRIES CO., LTD.;MATSUDA, AKIHISA;KONDO, MICHIO |
发明人 |
ITO, NORIKAZU;WATABE, YOSHIMI;MATSUDA, AKIHISA;KONDO, MICHIO |
分类号 |
C23C16/24;C23C16/509;C23C16/515;H01J37/32;H01L31/18;(IPC1-7):H01L31/20 |
主分类号 |
C23C16/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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