发明名称 Thin film forming method, thin film forming apparatus and solar cell
摘要 <p>The present invention is to provide a thin film forming method and apparatus which make it possible to form a thin film having an excellent thickness uniformity over a large-sized substrate. <??>According to the invention, there is provided a thin film forming method and apparatus comprising: a film forming chamber in which an inductive coupling electrode having a feeding portion and a grounding portion at its two ends is arranged; a high-frequency power source for feeding a high-frequency power to the feeding portion; and a waveform generator for amplitude-modulating the high-frequency power outputted from the high-frequency power source, whereby the amplitude-modulated high-frequency power is fed to the inductive coupling electrode to generate a plasma so that a thin film may be formed on a substrate arranged to face the inductive coupling electrode. <IMAGE></p>
申请公布号 EP1146569(A2) 申请公布日期 2001.10.17
申请号 EP20010108979 申请日期 2001.04.11
申请人 NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY;ISHIKAWAJIMA-HARIMA HEAVY INDUSTRIES CO., LTD.;MATSUDA, AKIHISA;KONDO, MICHIO 发明人 ITO, NORIKAZU;WATABE, YOSHIMI;MATSUDA, AKIHISA;KONDO, MICHIO
分类号 C23C16/24;C23C16/509;C23C16/515;H01J37/32;H01L31/18;(IPC1-7):H01L31/20 主分类号 C23C16/24
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