| 摘要 |
A method of forming a metal oxide semiconductor (MOS)-controlled bipolar transistor includes tilt angle implanting a first impurity into a semiconductor substrate and implanting a second impurity into the semiconductor substrate to form an emitter and a collector. A corresponding transistor arranged as to combine the large current drive capacity of a bipolar junction transistor (BJT) with the smaller device size of a metal oxide semiconductor field effect transistor (MOSFET) is also provided. The transistor includes a semiconductor structure, a gate located proximate the semiconductor structure, a gate insulator disposed intermediate the semiconductor structure and the gate, a source region located in the semiconductor structure, a drain region located in the semiconductor structure, and a buffer region located in the semiconductor structure proximate the drain region.
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