| 摘要 |
PURPOSE: Provided are a positive photoresist composition which is less liable to a sensitivity change with the lapse of time in the production of a semiconductor device and has a improved density dependency, a positive photoresist composition which has a satisfactory sensitivity and resolving power in the formation of a contact hole pattern and which is less liable to generate particles in a resist solution, and a positive type photoresist composition ensuring improved edge roughness of a resist pattern and excellent in shelf stability. CONSTITUTION: The positive type photoresist compositions comprise (A) a compound which generates an acid by radiation of active ray or radiation, (B) a resin, a structure of which is partially represented by general formula(1), (C) organic basic compound, and (D) at least one selected from fluorine-based and/or silicon-based surfactants and nonionic surfactant. In the formula(1), m denotes an integer of 1-6, each of R and R2 is alkyl group or cyclic alkyl group, R1 and R2 together may form cyclic alkyl group. Each of R3 and R4 is hydrogen atom, alkyl group or cyclic alkyl group, or R3 and R4 together may form cyclic alkyl group. Each of R5-R7 is alkyl group, cyclic alkyl group, aryl group, trialkylsilyl group or trialkylsilyloxy group. |
