| 摘要 |
An LSI semiconductor device having a device isolation structure and a method of fabricating the isolation structure are presented. The device is a buried-type field-shielding device which is fabricated in non-active regions of the LSI circuit, and includes field-shield insulator film formed on the interior walls of trench cavities formed on the substrate and the field-shield electrodes buried within the trench cavity. Unlike the conventional buried-type isolation devices, the top surface of present isolation structure is level with the upper surface of the substrate. Therefore, this device structure utilizes the interior space of the substrate rather than the surface area of the substrate as in the conventional field-shield isolation structure. The isolation structure not only achieves a higher density of integration of active devices in a given space of the substrate but also simplifies the design of interconnection lines, thereby suggesting a path to production of very large integrated circuits economically in the future.
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