| 摘要 |
Method for recycling a mask for shaping a microscopic pattern in semiconductors, LCD and similar one. The method comprises the steps of (1) collecting a waste mask, (2) removing at least one selected from the group considering pellicle and film of a metal layer (e.g., Cr, CrOx or ...), (3) depositing newly a partial region or a whole region of at least one selected from the group consisting the pellicle and the film of a metal layer and (4) drawing a pattern in accordance with predetermined design on the mask. The method further comprises the step of polishing quartz more than a predetermined thickness and still further comprises the step of marking an identifier on the mask for discriminating between an original mask and a recycled mask. |
