| 摘要 |
PURPOSE: A current bias circuit is provided to minimize change of circuit characteristic due to temperature change and effect of process variable to prevent degradation of the circuit. CONSTITUTION: The first and second bipolar junction transistors have common collector and base and different emitter area. The MOS transistor pair are connected to the first and second bipolar junction transistors and compensate the difference between the base-emitter voltage of the first bipolar junction transistor and the base-emitter voltage of the second bipolar junction transistor. The MOS transistor pair include the first and second MOS transistor having different size. The current mirror is connected to the MOS transistor pair and controls the output current.
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