摘要 |
<p>PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor memory in which malfunction at the time of rise of power source voltage can be prevented and which has a redundant function being operable in a low voltage state. SOLUTION: In this non-volatile semiconductor memory, a memory cell M0 consisting of floating gate field effect transistors has a negative threshold in which a threshold state is low. Therefore, even before power source voltage Vcc rises perfectly, the memory cell M0 can store correct replacement information, malfunction at the time of rise of power source voltage can be prevented, and operation in a low voltage state can be performed.</p> |