RAMBUS DRAM SEMICONDUCTOR DEVICE COMPENSATING DUTY CYCLES OF INPUT DATA

摘要

PURPOSE: A RAMBUS DRAM semiconductor device compensating for duty cycles of input data is provided to compensate for the duty cycles of the data having varying duty cycles upto 50%. CONSTITUTION: The RAMBUS DRAM semiconductor device includes a reference voltage generator(311) and a data receiver(321). The reference voltage generator receives data and generates a reference voltage. The data receiver receives the reference voltage, a clock signal and data, amplifies the data and the reference voltage synchronized with the clock signal and compensates the duty cycle of the data upto 50%. The reference voltage generator further includes a voltage divider(331), an analog-digital converter(335) and a digital-analog converter(337). The voltage divider generates a mid-voltage between the high level voltage and the low level voltage of the data. The analog-digital converter converts the output voltage of the voltage divider. The digital-analog converter converts the output signal of the analog-digital converter.