发明名称 |
CAPACITOR FOR ANALOG CIRCUIT, AND MANUFACTURING METHOD THEREOF |
摘要 |
Rapid thermal nitridation is carried out to form a nitride film (19) on a lower electrode (15) which is made of silicon, and a tantalum oxide dielectric film (23) is further formed thereon. Then, wet oxidization is carried out to oxidize the lower electrode through the dielectric film (23) and the nitride film (19), thus an oxide film (17) is formed between the lower electrode (15) and the nitride film (19). Further, silicon which is not bonded to nitrogen in the nitride film (19) is oxidized, thus an oxide film (21) whose effective thickness is equal to or greater than 2 nm. The oxidization also recrystallizes the dielectric film (23). Finally, an upper electrode (25) is formed, and the capacitor is completed. |
申请公布号 |
WO0145177(A1) |
申请公布日期 |
2001.06.21 |
申请号 |
WO2000JP08792 |
申请日期 |
2000.12.13 |
申请人 |
TOKYO ELECTRON LIMITED;HOSODA, KEIZO;MURAKI, YUSUKE;SATO, ATSUSHI;USHIKAWA, HARUNORI |
发明人 |
HOSODA, KEIZO;MURAKI, YUSUKE;SATO, ATSUSHI;USHIKAWA, HARUNORI |
分类号 |
H01L27/04;H01L21/02;H01L21/314;H01L21/316;H01L21/321;H01L21/822;H01L29/94 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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