| 摘要 |
PROBLEM TO BE SOLVED: To obtain a method for fabricating a semiconductor memory device in which high integration can be achieved while suppressing the influence on adjacent cells and isolation characteristics are enhanced without increasing the number of steps because impurity ions, implanted from above a gate electrode in order to store ROM data, spread in the lateral direction to affect adjacent cell transistors, because the isolation region is flush with the channel part of cell. SOLUTION: A plurality of diffusion regions which are to become source/ drain regions 5 are arranged in parallel on a semiconductor substrate 1, a plurality of gate electrodes 7 are formed in parallel on the semiconductor substrate 1 via a gate insulation film 6 in the direction crossing the diffusion region 5, trenches are made in the semiconductor substrate 1 except the regions for forming the diffusion regions 5 and the electrodes 7, and then the trenches are filled with an interlayer insulation film to form an isolation region. |
