SELECTIVE GROWTH METHOD FOR SOLID

摘要

PROBLEM TO BE SOLVED: To provide a selective growth method of a solid wherein the yield is improved by a simple method, and to provide a method for manufacturing a fine pattern where a selective growth of a solid is performed without removing a growth mask. SOLUTION: The surface of a growth mask material whose main component is silicon dioxide is processed with a silicon chloride gas or chlorosilane. The silicon chloride gas is preferred to be SiC14 (silicon tetrachloride) and Si2C16 (disilicon hexachloride), while the chlorosilane gas is preferred to be SiHC13 (trichlorosilane) and SiH2C12 (dichlorosilane).