发明名称 FORMATION OF METALLIC OXIDE THIN FILM BY MAGNETRON SPUTTERING DEVICE
摘要 PROBLEM TO BE SOLVED: To obtain a thin film of excellent film quality, by reciprocating a magnet specified times. SOLUTION: The magnet is reciprocated <= two times. Plasma is generated by glow discharge generated, e.g. by thin gaseous Ar on the space between an anode bar 15 and a target 14 by the application of DC voltage from a DC power source 13 to the target 14. A magnet 16 acts so as to confine plasma in the vicinity of the magnetic field in which it is generated and make its density into the high one. By the plasma whose density is made high by the magnetic field, sputtered particles from the sputtered target deposit on the surface of a glass substrate 1, and a film is deposited on the glass substrate 1. At this time, by moving the magnet 16, the partial depositing region of the film moves, and the formation of a film on the whole face of the glass substrate 1 having a large area is made possible. Preferably, the metallic oxide thin film is a transparent conductive film composed of ITO, SnO2 or ZnO.
申请公布号 JP2001032068(A) 申请公布日期 2001.02.06
申请号 JP19990204125 申请日期 1999.07.19
申请人 KANEGAFUCHI CHEM IND CO LTD 发明人 SUZUKI TAKAYUKI;NISHIO HITOSHI
分类号 H01L21/203;C23C14/08;C23C14/35;H01J37/34;(IPC1-7):C23C14/35 主分类号 H01L21/203
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