发明名称 APPARATUS AND METHOD FOR EXPOSING A SUBSTRATE TO PLASMA RADICALS
摘要 An apparatus and method for exposing a substrate to plasma including a first reaction chamber (300) adapted to generate a plasma comprising ions and radicals and a second reaction chamber (200) coupled to the first reaction chamber and adapted to house a substrate at (100). The second reaction chamber is coupled to the first reaction chamber by an inlet member (275) and radicals of the plasma flow through the inlet member into the second reaction chamber.
申请公布号 WO0065631(A2) 申请公布日期 2000.11.02
申请号 WO2000US10733 申请日期 2000.04.21
申请人 APPLIED MATERIALS, INC. 发明人 NOBLE, DAVID, B.;JALLEPALLY, RAVI;D'ASTICI, NATHAN;MINER, GARY;SAHIN, TURGUT;XING, GUANGCAI;BHATNAGAR, YASHRAJ
分类号 H05H1/46;C23C8/36;C23C14/48;C23C16/452;H01J37/32;H01L21/02;H01L21/26;H01L21/31;H01L21/318;(IPC1-7):H01J37/00 主分类号 H05H1/46
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