| 摘要 |
PROBLEM TO BE SOLVED: To protect a clad layer against cracking and to enable light or/and carrier to be trapped well in an active layer by a method wherein an n-type clad layer and/or a p-type clad layer is made to contain boron. SOLUTION: A light emitting device is equipped with clad layers 6 and 8 which are formed of nitride semiconductor material, and an active layer 7 interposed between the clad layers 6 and 8, where the clad layers 6 and 8 which contain boron B get large in refractive index, and a coefficient of trapping light in the active layer 7 becomes large, so that light is prevented from leaking out of the clad layers 6 and 8, and the light emitting device is prevented from deteriorating in oscillation efficiently. The clad layers 6 and 8 containing boron B become large in energy band, and a band gap between the active layer 7 and the clad layers 6 and 8 becomes large, so that carries injected into the active layer 7 are trapped well in the active layer 7. Especially, it is effective that B is added to the P-side clad layer 8. |
