发明名称 PATTERN FORMATION METHOD AND SEMICONDUCTOR DEVICE USING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a sufficient detection signal for an alignment mark even with a significantly small surface step, by allowing an acceleration voltage of electron beam to be at least a specific value, using an atom whose atomic number is titanium or above as the alignment mark, and allowing the step of the top layer to be a specific value or less. SOLUTION: With electron beam of acceleration voltage about 45 kV or higher, inter-layer matching drawing is performed using an alignment mark 105. For the alignment mark 105, a heavy metal atom of atomic number of titanium or above is used while the step of top layer is about 0.3μm or less. With the acceleration voltage of electron beam about 45 kV or higher, since the electron beam reaches about 10μm level or more from an incidence point, an alignment mark signal is sufficiently detected even if several layers of about a fewμm is formed on the upper layer of the alignment mark 105 by using a heavy metal of high reflectivity as the alignment mark 105.
申请公布号 JP2000150358(A) 申请公布日期 2000.05.30
申请号 JP19980327719 申请日期 1998.11.18
申请人 HITACHI LTD 发明人 YAMAMOTO JIRO;MURAI FUMIO;YOSHIMURA TOSHIYUKI;TERASAWA TSUNEO
分类号 H01L21/027;(IPC1-7):H01L21/027 主分类号 H01L21/027
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