MANUFACTURE FOR SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device with improved contact resistance between a contact plug and a conductive layer. SOLUTION: A thin damaged layer 37b on an upper face of a contact plug 37b is formed by means of accelerated ions in an etch-back process. In this case, the damaged layer 37b functions as a factor for increasing contact resistance between the contact plug 37a and a second conductive layer formed thereafter. To settle this problem of the damaged layer 37b, the damaged layer 37b is removed in a dry etching step with an oxygen gas or a mixed gas of the oxygen gas and a fluoride gas. In this way in a manufacturing method for a semiconductor device, the damaged layer 37b as a factor for increasing contact resistance on a surface of the contact plug 37a can be removed in the dry etching step, and the contact resistance can be improved.