| 摘要 |
PROBLEM TO BE SOLVED: To machine a line, e.g. a bit line, with a line width finer than the machining limit of photolithography. SOLUTION: In a DRAM having information storage capacitive elements C on a bit line BL, an interconnection trench 18 is made in an interconnection insulation film 17 formed on a gate electrode functioning as the word line WL of the DRAM and a side wall spacer 19 is formed on the side wall of the interconnection trench 18. A bit line BL of tungsten film, for example, and a first layer interconnection are then buried in the interconnection trenches 18 having interval limited by the side wall spacer 19. The bit line BL is connected with a semiconductor substrate 1 through contact plugs 21 and connected with the contact plug 21 at the bottom of the interconnection trench 18. |
