| 发明名称 |
Magnetoresistance effect film, a method of manufacturing the same, and magnetoresistance effect device |
| 摘要 |
Magnetic thin films 2 and 3 are stacked on a substrate 4 with a nonmagnetic thin film 1 interposed therebetween. An antiferromagnetic thin film 5 is arranged adjacent to one magnetic thin film 3. The inequality Hc2<Hr is satisfied between a bias magnetic field Hr of the antiferromagnetic thin film 5 and coercive force Hc2 of the other magnetic thin film 2. At least a part of the antiferromagnetic thin film 5 comprises NiMn of an fct structure. Alternatively, the antiferromagnetic thin film 5 comprises a two-layer structure composed of a CoO layer deposited on a NiO layer to a thickness between 10 and 40 angstroms.
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| 申请公布号 |
US5989690(A) |
申请公布日期 |
1999.11.23 |
| 申请号 |
US19980045663 |
申请日期 |
1998.03.20 |
| 申请人 |
NEC CORPORATION |
发明人 |
FUJIKATA, JUN-ICHI;HAYASHI, KAZUHIKO;YAMAMOTO, HIDEFUMI;ISHIHARA, KUNIHIKO;NAKADA, MASAFUMI |
| 分类号 |
G01R33/09;G11B5/39;H01F10/08;H01F10/32;H01F41/30;(IPC1-7):G11B5/66 |
主分类号 |
G01R33/09 |
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