发明名称 |
Blue edge emitting laser |
摘要 |
<p>An independently addressable, edge emitting semiconductor laser (200) emitting light in the blue wavelength range of 390 to 430 nanometers comprises a gallium nitride-based laser structure grown by selective area epitaxy and lateral mask overgrowth. By appropriate patterning of a dielectric mask (206) on the gallium nitride layer (204) on a sapphire substrate (202), areas in a second gallium nitride layer (210) can have a low defect density upon which the remainder of the laser structure (218-230) can be formed. <IMAGE></p> |
申请公布号 |
EP0955709(A2) |
申请公布日期 |
1999.11.10 |
申请号 |
EP19990303312 |
申请日期 |
1999.04.28 |
申请人 |
XEROX CORPORATION |
发明人 |
FLOYD, PHILIP D.;HOFSTETTER, DANIEL |
分类号 |
H01L33/00;H01S5/00;H01S5/02;H01S5/183;H01S5/22;H01S5/323;H01S5/343;(IPC1-7):H01S3/19 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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