| 摘要 |
PCT No. PCT/FR95/00945 Sec. 371 Date Jan. 13, 1997 Sec. 102(e) Date Jan. 13, 1997 PCT Filed Jul. 13, 1995 PCT Pub. No. WO96/02948 PCT Pub. Date Feb. 1, 1996A process for the production of a photovoltaic material or device based on monocrystalline silicon adapted to absorb particularly infrared radiation. A wafer, a slice or a chip region of monocrystalline silicon having a diffusion length greater than the path of the minorities in the base or greater than the total thickness of the wafer, slice or chip region, is obtained. Then the rear surface of the wafer, slice or chip region, not adapted to be exposed to photovoltaic radiation, is treated so as to create a rear field as well as zones or points of electrical contact. Then the forward surface is treated so as to form a thin surface emitter layer, a P-N junction of shallow depth, as well as a continuous flat substructure strongly doped, embedded in the emitter, of very small thickness and provided with several crystalline and electrical interfaces, particularly two interfaces of the L-H type and two crystalline hetero-interfaces. Finally, the slice, wafer or chip region, particularly the surface having the emitter, is subjected to a thermal treatment, for predetermined times and temperatures, so as to obtain in the emitter layer a hetero-structure of different materials or of materials of different crystallinities, particularly a structure with at least three layers of monocrystalline silicon/amorphous silicon or modified/monocrystalline silicon type, coinciding with the doping profile adopted.
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