发明名称 SYNCHRONOUS SEMICONDUCTOR STORAGE DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a synchronous semiconductor story device which can be prevented from entering into a test mode accidentally while it is in practical use. SOLUTION: A reset signal generating circuit 150 in a synchronous semiconductor memory device 1000 outputs a reset signal ZPOR1 in response to a power-on rest signal ZPOR which is generated immediately after a power supply is closed and an initialization command (for instance a precharge command) which is practiced for initialization after the power supply is closed. A test mode register included in a mode setting circuit 104 receives the reset signal ZPOR1 as a reset signal. With this constitution, an outputted test mode signal is put into an NOP state or the output of the test mode signal is discontinued.
申请公布号 JPH11149771(A) 申请公布日期 1999.06.02
申请号 JP19970313739 申请日期 1997.11.14
申请人 MITSUBISHI ELECTRIC CORP 发明人 SAKURAI MIKIO;TANIDA SUSUMU;TSUKIKAWA YASUHIKO;NAKANO MASAYA;FUKIAGE TAKAHIKO
分类号 G11C11/407;G01R31/317;G11C11/401;G11C29/14;(IPC1-7):G11C11/407;G11C29/00 主分类号 G11C11/407
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