发明名称 |
SYNCHRONOUS SEMICONDUCTOR STORAGE DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a synchronous semiconductor story device which can be prevented from entering into a test mode accidentally while it is in practical use. SOLUTION: A reset signal generating circuit 150 in a synchronous semiconductor memory device 1000 outputs a reset signal ZPOR1 in response to a power-on rest signal ZPOR which is generated immediately after a power supply is closed and an initialization command (for instance a precharge command) which is practiced for initialization after the power supply is closed. A test mode register included in a mode setting circuit 104 receives the reset signal ZPOR1 as a reset signal. With this constitution, an outputted test mode signal is put into an NOP state or the output of the test mode signal is discontinued. |
申请公布号 |
JPH11149771(A) |
申请公布日期 |
1999.06.02 |
申请号 |
JP19970313739 |
申请日期 |
1997.11.14 |
申请人 |
MITSUBISHI ELECTRIC CORP |
发明人 |
SAKURAI MIKIO;TANIDA SUSUMU;TSUKIKAWA YASUHIKO;NAKANO MASAYA;FUKIAGE TAKAHIKO |
分类号 |
G11C11/407;G01R31/317;G11C11/401;G11C29/14;(IPC1-7):G11C11/407;G11C29/00 |
主分类号 |
G11C11/407 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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