Method for controlling crystal orientation of ferroelectric thin film

摘要

In the production of ferroelectric PZT of PLZT thin film by the sol-gel method, application of precursor solution (sol) onto a substrate is followed by heat-treatment for pyrolysis at 150 - 250 DEG C, 250 - 359 DEG C, or 450 - 550 DEG C, and further firing for crystallization at 500 - 800 DEG C, whereby crystal orientation in the direction of the (111) plane, or the (111) and (100) planes, or the (100) and (200) planes can be effected.